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| General Purpose Transistor (NPN) COMCHIP www.comchiptech.com MMBT3904 NPN Silicon Type Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 COLLECTOR 3 1 BASE 1 2 .006 (0.15)max. .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Unit mW mW/C C/W mW mW/C C/W C RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 MDS0306001A Page 1 .044 (1.10) .035 (0.90) General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. COMCHIP www.comchiptech.com Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Min 40 60 6.0 -- -- Max -- -- -- 50 50 Unit Vdc Vdc Vdc nAdc nAdc v v ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) ON CHARACTERISTIC Symbol HFE Min 40 70 100 60 30 Max -- -- 300 -- -- Unit -- DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) -- -- VBE(sat) 0.65 -- 0.85 0.95 Vdc 0.2 0.3 Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 -- -- 1.0 0.5 100 1.0 -- -- 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k ohms X 10- 4 -- mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (V ( CC = 3.0 Vdc, VBE = - 0.5 Vdc, , , IC = 10 mAdc, IB1 = 1.0 mAdc) (V ( CC = 3.0 Vdc, , IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf -- -- -- -- 35 ns 35 200 ns v 300 ms, Duty Cycle v 2.0%. 50 MDS0306001A Page 2 General Purpose Transistor Rating and Characteristic Curves (MMBT3904) +3 V +10.9 V COMCHIP www.comchiptech.com Duty Cycle = 2% 300 ns 10 < t1 < 500 ms t1 +3 V +10.9 V 275 10 k Duty Cycle = 2% 275 10 k 0 - 0.5 V < 1 ns CS < 4 pF* - 9.1 V < 1 ns 1N916 CS < 4 pF* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 5.0 Capacitance (pF) 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 Cibo 3.0 2.0 Cobo 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 Q, Charge (pC) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Reverse Bias Voltage (V) I C, Collector Current (mA) Figure 3. Capacitance Figure 4. Charge Data MDS0306001A Page 3 General Purpose Transistor Rating and Characteristic Curves (MMBT3904) 500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 2.0 V COMCHIP www.comchiptech.com 500 IC/IB = 10 300 200 t r , Rise Time (ns) VCC = 40 V IC/IB = 10 Time (ns) tr @ VCC = 3.0 V 100 70 50 30 20 10 7 5 40 V 15 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 5. Turn - On Time 500 300 200 ts , Storage Time (ns) Figure 6. Rise Time 500 300 200 IC/IB = 20 t f , Fall Time (ns) IC/IB = 20 IC/IB = 10 ts = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 100 70 50 30 20 10 7 5 IC/IB = 20 100 70 50 30 20 10 7 5 IC/IB = 10 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 10 NF, Noise Figure (dB) SOURCE RESISTANCE = 200 IC = 1.0 mA W W NF, Noise Figure (dB) 14 f = 1.0 kHz 12 10 8 6 4 IC = 1.0 mA 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 IC = 0.5 mA IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA SOURCE RESISTANCE = 500 IC = 100 mA W 4.0 10 20 40 100 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.2 0.4 1.0 2.0 f, Frequency (kHz) R S, Source Resistance (k OHMS) Figure 9. MDS0306001A Figure 10. Page 4 General Purpose Transistor Rating and Characteristic Curves (MMBT3904) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe , Output Admittance ( m mhos) COMCHIP www.comchiptech.com 100 50 200 h fe , Current Gain 20 10 5 100 70 50 2 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 Figure 11. Current Gain 20 h re , Voltage Feeback Ratio (X 10 -4) Figure 12. Output Admittance 10 7.0 5.0 3.0 2.0 10 h ie , Input Impedance (k OHMS) 5.0 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C h FE, DC Current Gain (Normalized) VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 +25C - 55C 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 15. DC Current Gain MDS0306001A Page 5 General Purpose Transistor Rating and Characteristic Curves (MMBT3904) 1.0 COMCHIP www.comchiptech.com TJ = 25C VCE , Collector Emitter Voltage (V) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B, Base Current (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25C 1.0 VBE(sat) @ IC/IB =10 Coefficient (mV/ C) 1.0 0.8 V, Voltage (V) 0.5 +25C TO +125C qVC FOR VCE(sat) 0 - 0.5 - 55C TO +25C - 55C TO +25C VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 - 1.0 +25C TO +125C 0.2 0 - 1.5 - 2.0 qVB FOR VBE(sat) 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients MDS0306001A Page 6 |
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